In this work, a $2.5\times 2.5$ mm2 large-area 4H-SiC Schottky barrier photodiode with a grid-shaped semitransparent metal electrode is designed and fabricated for extreme ultraviolet (EUV) detection. The photodiode shows an ultra-low leakage current of ~3 pA under 20 V reverse bias at room temperature. Based on a synchrotron radiation source, the photo-response characteristics of the photodiode is measured between 5 nm and 140 nm, which show considerably higher responsivity than that of the control whole electrode device. The higher quantum efficiency of the grid-electrode device benefits from considerable lateral depletion of the SiC surface light absorption layer between adjacent electrode strips, which occurs even under zero bias. The device further exhibits good potential for high temperature operation.

中文翻译：

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用于 EUV 检测的具有半透明栅极的高性能 4H-SiC 肖特基光电二极管

在这项工作中，设计和制造了一个 2.5 美元×2.5 美元 mm2 的大面积 4H-SiC 肖特基势垒光电二极管，其带有网格状半透明金属电极，用于极紫外 (EUV) 检测。光电二极管在室温下在 20 V 反向偏压下显示约 3 pA 的超低漏电流。基于同步辐射源，光电二极管的光响应特性在 5 nm 到 140 nm 之间进行测量，显示出比控制整个电极装置高得多的响应率。栅极电极器件的更高量子效率得益于相邻电极条之间 SiC 表面光吸收层的显着横向耗尽，即使在零偏压下也会发生这种情况。该器件还表现出良好的高温操作潜力。