We develop a complete compact model to describe the forward current, reverse current, and capacitance of SiC Schottky barrier diodes. The model is based on the fundamental current mechanisms of thermionic emission and tunneling, and is usable over a large range of voltages, temperatures, and for a large range of device parameters. We also demonstrate good agreement with measured data. Furthermore, the development of this model outlines a methodology for transforming a tunneling equation into a compact form without numerical integration—this methodology can potentially be applied to other device structures.

中文翻译：

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基于基本电流机制的 SiC 肖特基势垒二极管的紧凑模型

我们开发了一个完整的紧凑模型来描述 SiC 肖特基势垒二极管的正向电流、反向电流和电容。该模型基于热电子发射和隧穿的基本电流机制，可用于大范围的电压、温度和大范围的器件参数。我们还展示了与测量数据的良好一致性。此外，该模型的开发概述了一种无需数值积分即可将隧道方程转换为紧凑形式的方法——这种方法可以潜在地应用于其他器件结构。