Abstract Low threading-dislocation-density and highly relaxed Ge films have been grown laterally on Si using the vapor-liquid-solid mechanism. To expand the application of this technique, larger film sizes and reduced growth times are needed. One way to increase Ge film sizes is to increase the growth rate by using a high GeH4 flux or high growth temperature. However, it was found that a high Ge growth rate tended to lead to the uncatalyzed growth of GeH4 and longer growth times also increased the possibility of uncatalyzed growth. Moreover, under the condition of higher growth rate, uncatalyzed growth appears in a shorter time. Therefore, a low growth rate is suggested to suppress the uncatalyzed growth of Ge while a relatively long growth time is required to increase the size and yield (percentage of micro-crucibles with Ge films) of the films. The growth conditions were investigated and then optimized in this study, and it has been found that the better results were obtained at 375 °C, 3 sccm GeH4 for 2 hours and 400 °C, 2 sccm GeH4 for 2 hours.

中文翻译：

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Si上金属催化、横向生长的Ge薄膜的生长条件

摘要 使用气-液-固机制在Si上横向生长了低穿透位错密度和高度松弛的Ge薄膜。为了扩大这种技术的应用，需要更大的薄膜尺寸和更短的生长时间。增加 Ge 膜尺寸的一种方法是通过使用高 GeH4 通量或高生长温度来提高生长速率。然而，发现高 Ge 生长速率往往导致 GeH4 的非催化生长，更长的生长时间也增加了非催化生长的可能性。而且，在较高的生长速率条件下，非催化生长出现的时间较短。因此，建议采用较低的生长速率来抑制 Ge 的未催化生长，同时需要相对较长的生长时间来增加薄膜的尺寸和产量（带有 Ge 膜的微型坩埚的百分比）。