Abstract Tin sulfide is a promising semiconductor candidate to replace the currently used absorber materials in thin film photovoltaic such as Cu(In,Ga)(S,Se)2 and CdTe devices, which use toxic and scarce elements. However, numerous challenges still remain to approach comparable efficiencies for SnS-based solar cells. In this report, we address the following: (i) impact of growth conditions on phase purity and crystal quality of SnS thin films deposited by close-spaced vacuum sublimation technique; (ii) based on optimized SnS growth conditions, we further fabricate tin sulfide solar cells using traditional CdS buffer and i-ZnO/ZnO:Al bilayers and investigate the impact of molybdenum and titanium back metal contacts on photovoltaic parameters of resulting devices; (iii) finally, using device simulations, we reveal the impact of minority carrier lifetime in the SnS absorber and recombination velocity at the SnS/CdS heterointerface on solar cell parameters, demonstrating that these are the main factors affecting the performance of SnS-based photovoltaic devices.

中文翻译：

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具有 Mo 和 Ti 背金属触点的 SnS 吸收层和 SnS/CdS 异质结太阳能电池的近距离升华

摘要 硫化锡是一种很有前景的半导体候选材料，可替代目前使用的有毒和稀缺元素的 Cu(In,Ga)(S,Se)2 和 CdTe 器件等薄膜光伏吸收材料。然而，要实现基于 SnS 的太阳能电池的可比效率，仍然存在许多挑战。在本报告中，我们解决了以下问题：（i）生长条件对通过近距离真空升华技术沉积的 SnS 薄膜的相纯度和晶体质量的影响；(ii) 基于优化的 SnS 生长条件，我们使用传统的 CdS 缓冲液和 i-ZnO/ZnO:Al 双层进一步制造硫化锡太阳能电池，并研究钼和钛背金属接触对所得器件光伏参数的影响；(iii) 最后，使用设备模拟，