Abstract Oxidative chemical vapor deposition (oCVD) is an efficient technique to produce highly conductive films of Poly (3,4-ethylenedioxythiophene) (PEDOT). Despite numerous studies on the oCVD of PEDOT films, there is limited information on the stability of the sublimation of solid oxidants and on their impact on the polymerization reactions. In this work, we use an in situ Quartz Crystal Microbalance to monitor film formation over time. Through a series of deposition experiments between 20 °C and 100 °C and for FeCl3/EDOT molar gas ratios between 17.3 and 75.3, we analyze in detail the correlations between process parameters and film morphology, composition, surface topography and electrical conductivity on 10 cm silicon wafers. By using multiple substrates at different positions into the reactor, we demonstrate that the formation of PEDOT occurs uniformly through purely surface reactions, following step growth polymerization principles. These results pave the way towards highly conductive oCVD PEDOT films processed from convenient solid oxidants.

中文翻译：

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涉及升华三氯化铁的 PEDOT 氧化化学气相沉积的开箱即用

摘要 氧化化学气相沉积 (oCVD) 是一种生产高导电聚 (3,4-乙撑二氧噻吩) (PEDOT) 薄膜的有效技术。尽管对 PEDOT 薄膜的 oCVD 进行了大量研究，但关于固体氧化剂升华的稳定性及其对聚合反应的影响的信息有限。在这项工作中，我们使用原位石英晶体微量天平随时间监测薄膜形成。通过一系列在 20 °C 到 100 °C 之间以及 FeCl3/EDOT 摩尔气体比在 17.3 到 75.3 之间的沉积实验，我们详细分析了工艺参数与薄膜形态、成分、表面形貌和 10 cm 上的电导率之间的相关性硅片。通过在反应器的不同位置使用多个基板，我们证明了 PEDOT 的形成是通过纯表面反应均匀发生的，遵循逐步增长聚合原理。这些结果为使用方便的固体氧化剂加工的高导电 oCVD PEDOT 薄膜铺平了道路。