Abstract The characteristics of AlGaN-based deep ultraviolet light-emitting diodes (UV LEDs) with quaternary AlInGaN streamlined quantum barriers (QBs) are investigated in this paper. The simulated results show that the light output power and the internal quantum efficiency (IQE) of deep UV LEDs with AlInGaN streamlined QBs have been improved obviously, and the efficiency droop effect has been significantly alleviated. After in-depth study, it is shown that quaternary AlInGaN streamlined QBs is designed to reduce the polarization charge density between quantum wells (QWs) and QBs, and relieve band bending. In addition, the streamline barrier can reduce the kinetic energy of injected carriers, and improve the probability of the carriers being bounced back to the quantum wells, so as to enhance the capture of carriers in the quantum wells. As a result, the recombination rate of electron and hole in the QWs is enhanced, the light output power and the IQE are improved, and the efficiency droop effect is alleviated.

中文翻译：

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具有四元AlInGaN流线型量子势垒的深紫外发光二极管降低偏振效应的研究

摘要 本文研究了具有四元AlInGaN流线型量子势垒（QB）的AlGaN基深紫外发光二极管（UV LED）的特性。仿真结果表明，采用AlInGaN流线型QBs的深紫外LED的光输出功率和内量子效率（IQE）得到明显提高，效率下降效应得到显着缓解。经过深入研究，表明四元AlInGaN流线型QBs旨在降低量子阱（QWs）和QBs之间的极化电荷密度，并缓解能带弯曲。此外，流线势垒可以降低注入载流子的动能，提高载流子反弹回量子阱的概率，从而增强量子阱中载流子的捕获。