Graphene is a material of particular interest for the implementation of sensors, and the ultimate performance of devices based on such a material is often determined by its flicker noise properties. Indeed, graphene exhibits, with respect to the vast majority of ordinary semiconductors, a peculiar behavior of the flicker noise power spectral density as a function of the charge carrier density. While in most materials flicker noise obeys the empirical Hooge law, with a power spectral density inversely proportional to the number of free charge carriers, in bilayer, and sometimes monolayer, graphene a counterintuitive behavior, with a minimum of flicker noise at the charge neutrality point, has been observed. We present an explanation for this stark difference, exploiting a model in which we enforce both the mass action law and the neutrality condition on the charge fluctuations deriving from trapping/detrapping phenomena. Here, in particular, we focus on the comparison between graphene and other semiconducting materials, concluding that a minimum of flicker noise at the charge neutrality point can appear only in the presence of a symmetric electron-hole behavior, a condition characteristic of graphene, but which is not found in the other commonly used semiconductors.

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石墨烯和普通半导体的闪烁噪声行为的理论比较

石墨烯是实现传感器特别感兴趣的材料，基于这种材料的设备的最终性能通常取决于其闪烁噪声特性。实际上，相对于绝大多数普通半导体，石墨烯表现出闪烁噪声功率谱密度作为电荷载流子密度的函数的特殊行为。在大多数材料中，闪变噪声遵循经验胡格定律，功率谱密度与自由电荷载流子的数量成反比，而在双层（有时是单层）中，石墨烯则违反直觉，在电荷中性点处的闪变噪声最小，已被观察到。我们对这种明显的差异进行了解释，开发一种模型，在该模型中，我们对由于陷阱/陷阱现象而产生的电荷波动同时执行质量作用定律和中性条件。在此，我们特别关注石墨烯与其他半导体材料之间的比较，得出的结论是，只有在对称的电子空穴行为（石墨烯的状态特征）存在的情况下，电荷中性点处的闪烁噪声才最小。在其他常用的半导体中找不到。