GaN multiquantum-well blue light-emitting diodes (LEDs) were radiated with ⁶⁰Co γ-rays for accumulated doses up to 2.5 Mrad (SiO₂). The radiation-induced current and 1/f noise degradations were studied when the devices operate at the low bias voltage. The current increased by 2.31 times, and the 1/f noise increased by 275.69 times after a dose of 2.5 Mrad (SiO₂). Based on Hurkx’s trap-assisted tunneling model, the degradation of current was explained. γ radiation created defects in the space-charge region of LEDs. These defects as generation-recombination centers lead to the increase in the current. In addition, based on the quantum l/f noise theory, the degradation of 1/f noise might be also attributed to these defects, which caused an increase in the Hooge constant and a decrease in the carrier lifetimes. The current and 1/f noise degradations can be attributed to the same physical origin. Compared to the current, the 1/f noise parameter is more sensitive, so it may be used to evaluate the radiation resistance capability of GaN blue LEDs.

中文翻译：

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低偏压下γ辐射引起的GaN基蓝光LED降解的研究

的GaN多量子阱蓝色发光二极管（LED）与被照射^60条钴γ射线对累积剂量高达2.5兆拉德（SIO ₂）。当器件在低偏置电压下工作时，研究了辐射引起的电流和1 / f噪声劣化。剂量为2.5 Mrad（SiO ₂）后，电流增加了2.31倍，1 / f噪声增加了275.69倍。基于Hurkx的陷阱辅助隧穿模型，解释了电流的衰减。γ辐射会在LED的空间电荷区域中产生缺陷。这些缺陷作为发电复合中心导致电流增加。另外，基于量子l / f根据噪声理论，1 / f噪声的下降也可能归因于这些缺陷，这些缺陷导致Hooge常数增加，并且载流子寿命缩短。当前和1 / f噪声的下降可以归因于相同的物理起源。与电流相比，1 / f噪声参数更敏感，因此可以将其用于评估GaN蓝色LED的抗辐射能力。