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Design of Strained Ge Schottky Diode on Si Substrate for Microwave Rectifier Circuit
Advances in Condensed Matter Physics ( IF 1.5 ) Pub Date : 2020-02-26 , DOI: 10.1155/2020/3597142
Wei-Feng Liu 1 , Xue-Mei Wu 1 , Jian-Jun Song 1 , Xin-Yan Zhao 1 , Rong-Xi Xuan 1
Affiliation  

In recent years, wireless energy transmission technology has developed rapidly and has received increasing attention in the industry. For microwave wireless energy transfer system applications, Ge Schottky diodes as the core components of the rectifier circuit are commonly used. Compared with Ge semiconductor, strained Ge semiconductor on Si substrate has the advantages of compatibility with Si process, low cost, and high electron mobility. It is an ideal replacement material for Ge semiconductor applications. In view of this, based on the model of the relationship between the performance of strained Ge semiconductor on Si substrate Schottky diodes and the geometric parameters of the device and the physical parameters of the material, Silvaco TCAD and ADS simulation software are jointly used to propose a novel strained Ge semiconductor on Si substrate Schottky diode for microwave rectification circuit. Simulation results show that the strained Ge semiconductor on Si substrate Schottky diode has a rectification efficiency of 70.1% when the input of the rectifier circuit is 20 dBm, the load resistance is R = 1000 Ω, and the load capacitance is C = 100 pF. Compared with traditional Ge Schottky diodes, this optimal operating point is closer to a low energy density, which is beneficial to a wide range of energy absorption. Studies have shown the feasibility of replacing Ge Schottky diodes. The research in this paper can provide valuable reference for the design and development of the core components of the rectifier circuit of the microwave infinite energy transmission system.

中文翻译:

用于微波整流电路的Si衬底上应变Ge肖特基二极管的设计

近年来,无线能量传输技术发展迅速,越来越受到业界的关注。对于微波无线能量传输系统应用,通常使用锗肖特基二极管作为整流电路的核心元件。与Ge半导体相比,Si衬底上的应变Ge半导体具有与Si工艺兼容、成本低、电子迁移率高等优点。它是锗半导体应用的理想替代材料。鉴于此,基于Si衬底肖特基二极管上应变Ge半导体的性能与器件几何参数和材料物理参数的关系模型,Silvaco TCAD 和 ADS 仿真软件联合使用,提出了一种用于微波整流电路的新型硅衬底肖特基二极管上的应变锗半导体。仿真结果表明,当整流电路的输入为20 dBm,负载电阻R = 1000 Ω,负载电容C = 100 pF时,Si衬底肖特基二极管上的应变Ge半导体的整流效率为70.1%。与传统的Ge肖特基二极管相比,这种最佳工作点更接近低能量密度,有利于大范围的能量吸收。研究显示了替代Ge肖特基二极管的可行性。本文的研究可为微波无限能量传输系统整流电路核心器件的设计开发提供有价值的参考。
更新日期:2020-02-26
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