In this study, we have successfully deposited n-type Cu2O triangular nanopyramids on Si by employing ion beam sputter deposition with an Ar : O2 ratio of 9 : 1 at a substrate temperature of 450°C. Scanning electron microscopy measurements showed attractively triangular nanopyramids of ∼500 nm edge and height lengths. Both X-ray diffraction and Raman spectroscopy characterizations showed the structures were single-phase polycrystalline Cu2O, and the room-temperature photoluminescence investigation showed interestingly green and blue exciton luminescence emissions. All Mott—Schottky, linear sweep voltammetry, and photocurrent measurements indicated that the conductivity of the Cu2O pyramids is of n-type.

中文翻译：

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离子束溅射沉积法生长 Cu2O 纳米锥

在这项研究中，我们通过使用离子束溅射沉积在 450°C 的衬底温度下，Ar:O2 的比例为 9:1，成功地在 Si 上沉积了 n 型 Cu2O 三角形纳米金字塔。扫描电子显微镜测量显示出有吸引力的三角形纳米金字塔，其边缘和高度长度约为 500 nm。X 射线衍射和拉曼光谱表征均显示结构为单相多晶 Cu2O，室温光致发光研究显示有趣的绿色和蓝色激子发光发射。所有 Mott-Schottky、线性扫描伏安法和光电流测量都表明 Cu2O 金字塔的电导率是 n 型的。