The interest in using the radiation detectors based on high resistive chromium-compensated GaAs (GaAs:Cr) in high energy physics and others applied fields has been growing steadily due to its numerous advantages over others classical materials. High radiation hardness at room temperature stands out and needs to be systematically investigated. In this paper an experimental study of the effect of 20.9 MeV electrons generated by the LINAC-200 accelerator on some properties of GaAs:Cr based sensors is presented. In parallel, Si sensors were irradiated at the same conditions, measured and analyzed in order to perform a comparative study. The target sensors were irradiated with the dose up to 1.5 MGy. The current–voltage characteristics, resistivity, charge collection efficiency and their dependences on the bias voltage and temperature were measured at different absorbed doses. An analysis of the possible microscopic mechanisms leading to the observed effects in GaAs:Cr sensors is presented in the article.

由于其相对于其他经典材料的众多优势，在高能物理学和其他应用领域中使用基于高电阻铬补偿GaAs（GaAs：Cr）的辐射探测器的兴趣一直在稳步增长。室温下的高辐射硬度非常突出，需要进行系统的研究。本文对LINAC-200加速器产生的20.9 MeV电子对基于GaAs：Cr的传感器某些性能的影响进行了实验研究。同时，在相同条件下对Si传感器进行辐照，测量和分析，以进行比较研究。目标传感器的辐照剂量最高为1.5 MGy。电流-电压特性，电阻率，在不同的吸收剂量下测量了电荷收集效率及其对偏置电压和温度的依赖性。本文介绍了导致GaAs：Cr传感器中观察到的影响的可能的微观机制的分析。