Radiation damage of J-series silicon photomultipliers (SiPMs) has been studied in the context of using these photodetectors in future space-borne scintillation detectors. Several SiPM samples were exposed to 101.4 MeV protons, with 1 MeV neutron equivalent fluence ranging from $1.27\times {10}^8$ n${}_{\mathrm{eq}}$/cm${}^2$ to $1.23\times 10^{10}$ n${}_{\mathrm{eq}}$/cm${}^2$. After the irradiation, the SiPMs experienced a large increase in the dark current and noise, which may pose problems for long-running space missions in terms of power consumption, thermal control and detection of low-energy events. Measurements performed with a CeBr3 scintillator crystal showed that after exposure to $1.23\times {10}^{10}$ n${}_{\mathrm{eq}}$/cm${}^2$ and following room-temperature annealing, the dark noise of a single 6 mm square SiPM at room temperature increased from 0.1 keV to 2 keV. Because of the large SiPM noise, the gamma-ray detection threshold increased to approximately 20 keV for a CeBr3 detector using a 4-SiPM array and 40 keV for a detector using a 16-SiPM array. Only a small effect of the proton irradiation on the average detector signal was observed, suggesting no or little change to the SiPM gain and photon detection efficiency.

在未来的星载闪烁探测器中使用这些光电探测器的背景下，已经研究了J系列硅光电倍增管（SiPM）的辐射损伤。几个SiPM样品暴露于101.4 MeV质子中，其中1 MeV中子等效注量范围为$\mathrm{1个}。27\times {10}^8$ ñ${}_{\mathrm{当量}}$/厘米${}^2$ 至 $\mathrm{1个}。23\times \mathrm{1个}{0}^{10}$ ñ${}_{\mathrm{当量}}$/厘米${}^2$。辐照后，SiPM的暗电流和噪声大大增加，这可能对长时间运行的太空飞行任务造成功耗，热控制和低能事件检测方面的问题。用CeBr3闪烁晶体进行的测量表明，暴露于$\mathrm{1个}。23\times {10}^{10}$ ñ${}_{\mathrm{当量}}$/厘米${}^2$室温退火后，单个6 mm见方的SiPM的暗噪声在室温下从0.1 keV增加到2 keV。由于SiPM噪声大，对于使用4-SiPM阵列的CeBr3检测器，伽马射线检测阈值增加到大约20 keV，对于使用16-SiPM阵列的检测器，伽马射线检测阈值增加到40 keV。观察到质子辐照对平均检测器信号的影响很小，这表明SiPM增益和光子检测效率没有变化或几乎没有变化。