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Heterostructured thin LaFeO3/g-C3N4 films for efficient photoelectrochemical hydrogen evolution
International Journal of Hydrogen Energy ( IF 8.1 ) Pub Date : 2020-05-31 , DOI: 10.1016/j.ijhydene.2020.04.267
Vincent Guigoz , Lavinia Balan , Abdelhay Aboulaich , Raphaël Schneider , Thomas Gries

The deposition of LaFeO3 at the surface of a graphitic carbon nitride (g-C3N4) film via magnetron sputtering followed by oxidation for photoelectrochemical (PEC) water splitting is reported. The LaFeO3/g-C3N4 film was investigated by various characterization techniques including SEM, XRD, Raman spectroscopy, XPS and photo-electrochemical measurements. Our results show that the hydrogen production rate of a g-C3N4 film covered by a LaFeO3 film, exhibiting both a thickness of ca. 50 nm, is of 10.8 μmol h−1 cm−2 under visible light irradiation. This value is ca. 70% higher than that measured for pure LaFeO3 and g-C3N4 films and confirms the effective separation of electron-hole pairs at the interface of LaFeO3/g-C3N4 films. Moreover, the LaFeO3/g-C3N4 films were demonstrated to be stable and retained a high activity (ca. 70%) after the third reuse.



中文翻译:

异质结构化LaFeO 3 / gC 3 N 4薄膜,可有效释放光电化学氢

报道了通过磁控溅射在石墨碳氮化物(gC 3 N 4)膜表面沉积LaFeO 3,然后通过氧化进行光电化学(PEC)水分解的方法。通过包括SEM,XRD,拉曼光谱,XPS和光电化学测量在内的各种表征技术研究了LaFeO 3 / gC 3 N 4膜。我们的结果表明,被LaFeO 3膜覆盖的gC 3 N 4膜的氢气产生速率,两者的厚度均为ca。50 nm为10.8μmolh -1  cm -2在可见光照射下。此值为ca。比纯LaFeO 3和gC 3 N 4薄膜的测量值高70%,并证实了在LaFeO 3 / gC 3 N 4薄膜的界面上电子-空穴对的有效分离。此外,LaFeO 3 / gC 3 N 4膜被证明是稳定的,并且在第三次重复使用后仍保留了高活性(约70%)。

更新日期:2020-06-30
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