The deposition of LaFeO₃ at the surface of a graphitic carbon nitride (g-C₃N₄) film via magnetron sputtering followed by oxidation for photoelectrochemical (PEC) water splitting is reported. The LaFeO₃/g-C₃N₄ film was investigated by various characterization techniques including SEM, XRD, Raman spectroscopy, XPS and photo-electrochemical measurements. Our results show that the hydrogen production rate of a g-C₃N₄ film covered by a LaFeO₃ film, exhibiting both a thickness of ca. 50 nm, is of 10.8 μmol h⁻¹ cm⁻² under visible light irradiation. This value is ca. 70% higher than that measured for pure LaFeO₃ and g-C₃N₄ films and confirms the effective separation of electron-hole pairs at the interface of LaFeO₃/g-C₃N₄ films. Moreover, the LaFeO₃/g-C₃N₄ films were demonstrated to be stable and retained a high activity (ca. 70%) after the third reuse.

报道了通过磁控溅射在石墨碳氮化物（gC ₃ N ₄）膜表面沉积LaFeO ₃，然后通过氧化进行光电化学（PEC）水分解的方法。通过包括SEM，XRD，拉曼光谱，XPS和光电化学测量在内的各种表征技术研究了LaFeO ₃ / gC ₃ N ₄膜。我们的结果表明，被LaFeO ₃膜覆盖的gC ₃ N ₄膜的氢气产生速率，两者的厚度均为ca。50 nm为10.8μmolh ^-1  cm ^-2在可见光照射下。此值为ca。比纯LaFeO ₃和gC ₃ N ₄薄膜的测量值高70％，并证实了在LaFeO ₃ / gC ₃ N ₄薄膜的界面上电子-空穴对的有效分离。此外，LaFeO ₃ / gC ₃ N ₄膜被证明是稳定的，并且在第三次重复使用后仍保留了高活性（约70％）。