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Effect of Graphene Oxide on Growth of Wheat Seedlings: Insights from Oxidative Stress and Physiological Flux.
Bulletin of Environmental Contamination and Toxicology ( IF 2.7 ) Pub Date : 2020-05-26 , DOI: 10.1007/s00128-020-02888-9
Wenjie Ren 1 , Haiwei Chang 1 , Lina Li 1, 2 , Ying Teng 1
Affiliation  

In this study, the responses of wheat seedlings to graphene oxide (GO) were investigated at a wide concentration range of 0–1000 mg L−1, including oxidative stress, real-time membrane potential as well as proton and calcium ion fluxes. The results show that GO induced a hormesis effect on root growth (low concentration (100 mg L−1) promotion and high concentration (1000 mg L−1) inhibition. Oxidative stress was responsible for the growth inhibition at GO concentration of 1000 mg L−1, as suggested from great stimulation in the activities of antioxidant enzymes and MDA content in roots or leaves. Superoxide dismutase (SOD), catalase (CAT), peroxidase (POD) activities were highly correlated with MDA levels (r2 = 0.963, 0.984, and 0.960, respectively). GO exposure caused significant concentration-dependent membrane depolarization in roots, and significantly inhibited H+ efflux and extracellular Ca2+ influx in root cap.

中文翻译:

氧化石墨烯对小麦幼苗生长的影响:氧化应激和生理通量的见解。

在这项研究中,研究了小麦幼苗在0–1000 mg L -1的宽浓度范围内对氧化石墨烯(GO)的响应,包括氧化应激,实时膜电位以及质子和钙离子通量。结果表明,GO诱导了对根生长的抑制作用(低浓度(100 mg L -1)促进和高浓度(1000 mg L -1)抑制;氧化胁迫是GO浓度为1000 mg L时的生长抑制因子。-1,表明强烈刺激了根或叶中抗氧化酶的活性和MDA含量,超氧化物歧化酶(SOD),过氧化氢酶(CAT),过氧化物酶(POD)活性与MDA水平高度相关(r 2 分别为0.963、0.984和0.960)。GO暴露在根部引起明显的浓度依赖性膜去极化,并显着抑制根冠中的H +外流和细胞外Ca 2+流入。
更新日期:2020-05-26
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