Abstract

Two dimensional transition metal dichalcogenides (TMDCs) have attracted much interest and shown promise in many applications. However, it is challenging to obtain uniform TMDCs with clean surfaces, because of the difficulties in controlling the way the reactants are supplied to the reaction in the current chemical vapor deposition growth process. Here, we report a new growth approach called ‘dissolution-precipitation’ (DP) growth, where the metal sources are sealed inside glass substrates to control their feeding to the reaction. Noteworthy, the diffusion of metal source inside glass to its surface provides a uniform metal source on the glass surface, and restricts the TMDC growth to only a surface reaction while eliminating unwanted gas-phase reaction. This feature gives rise to highly uniform monolayer TMDCs with a clean surface on centimeter-scale substrates. The DP growth works well for a large variety of TMDCs and their alloys, providing a solid foundation for the controlled growth of clean TMDCs by the fine control of the metal source.

中文翻译：

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均匀洁净的二维过渡金属二硫属化物的溶解-沉淀生长

 抽象的

二维过渡金属二硫属化物（TMDC）引起了人们的广泛兴趣，并在许多应用中显示出前景。然而，由于在当前化学气相沉积生长过程中难以控制反应物供给反应的方式，因此获得具有清洁表面的均匀TMDC具有挑战性。在这里，我们报告了一种称为“溶解-沉淀”（DP）生长的新生长方法，其中金属源被密封在玻璃基板内以控制它们对反应的供给。值得注意的是，玻璃内部金属源向其表面的扩散在玻璃表面上提供了均匀的金属源，并将TMDC生长限制为仅表面反应，同时消除了不需要的气相反应。这一特性使得在厘米级基底上具有清洁表面的高度均匀的单层 TMDC 成为可能。 DP生长适用于多种TMDC及其合金，为通过金属源的精细控制来控制清洁TMDC的生长提供了坚实的基础。