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Mechanisms of Thermal Quenching of Defect‐Related Luminescence in Semiconductors
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2020-05-29 , DOI: 10.1002/pssa.202000101 Michael A. Reshchikov 1
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2020-05-29 , DOI: 10.1002/pssa.202000101 Michael A. Reshchikov 1
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The intensity of defect‐related photoluminescence (PL) in semiconductors changes with temperature, and it usually decreases exponentially above some critical temperature, a process called the PL quenching. Herein, main mechanisms of PL quenching are reviewed. Most examples are given for defects in GaN as the most studied modern semiconductor, which has important applications in technology. Peculiarities of defect‐related PL in I–VII, II–VI, and III–V compounds are also reviewed. Three basic mechanisms of PL quenching are distinguished. Most examples of PL quenching can be explained by the Schön–Klasens mechanism, whereas very few or even no confirmed cases can be found in support of the Seitz–Mott mechanism. Third mechanism, the abrupt and tunable quenching, is common for high‐resistivity semiconductors. Temperature dependence of capture coefficients and a number of other reasons may affect the temperature dependence of PL intensity. The “negative quenching” or a significant rise in PL intensity with temperature is explained by a competition between recombination channels for minority carriers.
中文翻译：
半导体中与缺陷相关的发光的热猝灭机理
半导体中与缺陷相关的光致发光（PL）的强度随温度变化，并且通常在某个临界温度以上呈指数下降，此过程称为PL猝灭。在此，综述了PL猝灭的主要机理。GaN的缺陷是研究最多的现代半导体，在半导体技术中具有重要的应用。还审查了I–VII，II–VI和III–V化合物中与缺陷相关的PL的特殊性。PL淬灭的三种基本机理被区分。PL淬灭的大多数例子可以通过Schön-Klasens机制来解释，而几乎没有甚至没有证实的病例可以证明Seitz-Mott机制。第三种机理是突然的和可调的猝灭，这在高电阻率半导体中很常见。捕获系数的温度依赖性以及许多其他原因可能会影响PL强度的温度依赖性。PL强度随温度的“负淬灭”或显着升高是由少数载子的重组通道之间的竞争引起的。
更新日期：2020-05-29
中文翻译：
半导体中与缺陷相关的发光的热猝灭机理
半导体中与缺陷相关的光致发光（PL）的强度随温度变化，并且通常在某个临界温度以上呈指数下降，此过程称为PL猝灭。在此，综述了PL猝灭的主要机理。GaN的缺陷是研究最多的现代半导体，在半导体技术中具有重要的应用。还审查了I–VII，II–VI和III–V化合物中与缺陷相关的PL的特殊性。PL淬灭的三种基本机理被区分。PL淬灭的大多数例子可以通过Schön-Klasens机制来解释，而几乎没有甚至没有证实的病例可以证明Seitz-Mott机制。第三种机理是突然的和可调的猝灭，这在高电阻率半导体中很常见。捕获系数的温度依赖性以及许多其他原因可能会影响PL强度的温度依赖性。PL强度随温度的“负淬灭”或显着升高是由少数载子的重组通道之间的竞争引起的。
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