InAs/InP Quantum Dots in Etched Pits by Droplet Epitaxy in Metalorganic Vapor Phase Epitaxy,Physica Status Solidi-Rapid Research Letters

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InAs/InP Quantum Dots in Etched Pits by Droplet Epitaxy in Metalorganic Vapor Phase Epitaxy
Physica Status Solidi-Rapid Research Letters ( IF 2.5 ) Pub Date : 2020-06-08 , DOI: 10.1002/pssr.202000173
Elisa Maddalena Sala ₁ , Young In Na ₂ , Max Godsland ₂ , Aristotelis Trapalis ₁ , Jon Heffernan ₁

Affiliation

The growth of InAs quantum dots (QDs) on InP(100) via droplet epitaxy in a metalorganic vapor phase epitaxy (MOVPE) reactor is studied. Formation of indium droplets is investigated with varying substrate temperature, and spontaneous formation of nanoholes is observed for the first time under MOVPE conditions. Indium droplets are crystallized into QDs under arsenic flow at different temperatures. For temperatures greater than 500 °C, a local etching takes place in the QD vicinity, showing an unexpected morphology which is found to be strongly dependent on the crystallization conditions. Such QDs are structurally and optically investigated and emission from single QDs in the telecom C‐band is detected via microphotoluminescence at low temperature.

中文翻译：

金属有机蒸气相外延中的液滴外延对刻蚀坑中的InAs / InP量子点

研究了在有机金属气相外延（MOVPE）反应器中通过液滴外延在InP（100）上生长InAs量子点（QD）。在不同的衬底温度下研究铟液滴的形成，并且在MOVPE条件下首次观察到纳米孔的自发形成。铟滴在不同温度下在砷流下结晶成量子点。对于高于500°C的温度，在QD附近会发生局部蚀刻，显示出意想不到的形态，这在很大程度上取决于结晶条件。对此类量子点进行了结构和光学研究，并通过低温下的微光致发光来检测电信C波段单个量子点的发射。

更新日期：2020-06-08

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