Abstract In this paper, solution-processed tantalum-doped zinc-tin-oxide (TZTO) thin films were explored as channel layer for high performance thin-film transistors (TFTs). The microstructure, surface morphology and oxygen defects states properties of the thin films with various tantalum concentration were investigated by Grazing incidence X-ray diffraction, Atomic force microscopy and X-ray photoelectron spectroscopy, respectively. It was found that the TZTO thin films exhibit amorphous microstructure nature; its surface roughness and the oxygen vacancies change greatly with different tantalum doping concentration. Then, TFTs with TZTO channel layer were fabricated, and the electrical performance were also evaluated. The results indicate that tantalum atom is able to act as a carrier generator and oxygen vacancy suppressor simultaneously, which correspondingly enhance the mobility and stability of the devices. 2% tantalum doped devices show optimized electrical characteristics with a current on/off ratio of 107, a threshold voltage of 9.2 V, a subthreshold swing of 0.82 V/Dec and a field effect mobility of 2.24 cm2/Vs as well as excellent bias stress stability.

中文翻译：

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钽掺杂同时增强锌锡氧化物薄膜晶体管的电性能和稳定性

摘要 本文探索了溶液处理的掺钽氧化锌锡 (TZTO) 薄膜作为高性能薄膜晶体管 (TFT) 的沟道层。通过掠入射X射线衍射、原子力显微镜和X射线光电子能谱分别研究了不同钽浓度薄膜的微观结构、表面形貌和氧缺陷态特性。发现TZTO薄膜表现出非晶微结构；随着钽掺杂浓度的不同，其表面粗糙度和氧空位变化很大。然后，制造了具有 TZTO 沟道层的 TFT，并评估了电性能。结果表明钽原子能够同时作为载流子发生器和氧空位抑制器，相应地提高了设备​​的移动性和稳定性。2% 钽掺杂器件显示出优化的电气特性，电流开/关比为 107，阈值电压为 9.2 V，亚阈值摆幅为 0.82 V/Dec，场效应迁移率为 2.24 cm2/Vs 以及出色的偏置应力稳定。