Abstract The characterization of commercial-grade power transistors upon high levels of particle irradiation is required to enable radiation tolerant LED power supplies for the new luminaires of CERN accelerator tunnels, which represent a harsh environment for semiconductor devices. This work describes the effects of 24 GeV/c proton irradiation on commercial GaN hybrid-drain-embedded gate injection transistors (HD-GITs) after a fluence of 5.9 × 1014 p/cm2. Measurements of drain leakage current, threshold voltage and Ids − Vds curves show that only a minor variation occurs in the electrical properties of GaN HD-GITs after the considered fluence; for example, an average increase of ≈11–13 mV is found in the threshold voltage upon irradiation. We also put forward a physical explanation of the observed degradation caused by proton irradiation; in particular, the electron drift velocity in the 2DEG channel at high electric fields appears to decrease due to a radiation-induced increase in phonon relaxation rate. Finally, an AC/DC LED power supply with current control using GaN HD-GITs is proposed for the new luminaires of CERN tunnels, meeting the requirements in terms of radiation hardness and light quality.

中文翻译：

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高能质子辐照对 GaN 混合漏极嵌入式栅极注入晶体管的影响

摘要 商用级功率晶体管在高水平粒子辐照下的表征需要为 CERN 加速器隧道的新灯具提供耐辐射的 LED 电源，这代表了半导体设备的恶劣环境。这项工作描述了 24 GeV/c 质子辐照对商用 GaN 混合漏极嵌入式栅极注入晶体管 (HD-GIT) 在 5.9 × 1014 p/cm2 的通量后的影响。对漏漏电流、阈值电压和 Ids - Vds 曲线的测量表明，在考虑的能量密度之后，GaN HD-GIT 的电特性仅发生了很小的变化；例如，辐照后阈值电压平均增加 ≈11-13 mV。我们还对观察到的质子辐射引起的降解提出了物理解释；特别是，由于辐射诱导的声子弛豫率增加，高电场下 2DEG 通道中的电子漂移速度似乎降低。最后，针对CERN隧道的新型灯具，提出了一种使用GaN HD-GIT进行电流控制的AC/DC LED电源，满足辐射硬度和光质量方面的要求。