Abstract Copper bismuth oxide (CuBi2O4 or Bi2CuO4) thin films have been elaborated for the first time by radio-frequency magnetron sputtering using a homemade CuBi2O4 ceramic target. X-ray diffraction characterizations revealed an amourphous phase for as-deposited films. After air annealing at 450 °C for 12 h, a pure polycristalline CuBi2O4 phase can been obtained. Raman spectroscopy confirmed the film phase purity. The influence of the thickness on the structural properties of the films have been studied and we observed that all films treated above 450 °C are crystallized. The thinner films show preferred orientation while there are less crystal defects for the thickest films (∼700 nm). Atomic force microscopy shows a homogeneous polycristalline microstructure at the surface of the film. Optical measurements performed by UV–vis-IR spectrophotometry indicate that these films have one of their optical band gaps in the visible region (Eg∼1.5 eV) which makes them suitable as thin films solar absorption materials.

中文翻译：

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射频磁控溅射CuBi2O4薄膜的制备与研究

摘要 使用自制的 CuBi2O4 陶瓷靶材，通过射频磁控溅射首次制备了氧化铜铋（CuBi2O4 或 Bi2CuO4）薄膜。X 射线衍射表征揭示了沉积膜的无定形相。在 450°C 下空气退火 12 小时后，可以获得纯多晶 CuBi2O4 相。拉曼光谱证实了膜相纯度。已经研究了厚度对薄膜结构特性的影响，我们观察到所有在 450°C 以上处理的薄膜都结晶。较薄的薄膜显示出优先取向，而最厚的薄膜（~700 nm）的晶体缺陷较少。原子力显微镜显示薄膜表面具有均匀的多晶微观结构。