An instrument has been developed for precision controlled exposures of electronic devices and material samples in particle beams. The instrument provides simultaneously a real time record of the profile of the beam and the fluence received. The system is capable of treating devices with dimensional scales ranging from millimeters to extended objects of cross sections measured in tens of square centimeters. The instrument has been demonstrated to operate effectively in integrated fluences ranging up to a few times $10^{16}$ 1-MeV-neutron-equivalent/cm$^{2}$ (n$_{\textrm{eq}}$). The positioner portion of the system comprises a set of remotely controllable sample holders incorporating cooling and interfaces for sample power and readout, all constructed from low activation technologies. The monitoring component of the system samples the current or voltage of radiation tolerant silicon diodes placed directly in the path of the beam.

中文翻译：

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用于精确控制辐射暴露、带电光束轮廓测量和超过 1016 neq/cm2 的实时通量监测的仪器

已开发出一种仪器，用于在粒子束中精确控制电子设备和材料样品的曝光。该仪器同时提供光束轮廓和接收到的通量的实时记录。该系统能够处理尺寸范围从毫米到数十平方厘米的横截面扩展物体的设备。该仪器已被证明可以在高达几倍的积分通量中有效运行 $10^{16}$ 1-MeV-neutron-equivalent/cm$^{2}$ (n$_{\textrm{eq}}$ ）。该系统的定位器部分包括一组远程控制的样品架，包括冷却和用于样品电源和读数的接口，所有这些都由低激活技术构成。