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Erratum: “Lateral charge migration induced abnormal read disturb in 3D charge-trapping NAND flash memory” [ Appl. Phys. Express 13 [https://doi.org/10.35848/1882-0786/ab8729] , 054002 (2020) ]
Applied Physics Express ( IF 2.3 ) Pub Date : 2020-05-28 , DOI: 10.35848/1882-0786/ab93a2 Fei Wang , Rui Cao , Yachen Kong , Xiaolei Ma , Xuepeng Zhan , Yuan Li , Jiezhi Chen
Applied Physics Express ( IF 2.3 ) Pub Date : 2020-05-28 , DOI: 10.35848/1882-0786/ab93a2 Fei Wang , Rui Cao , Yachen Kong , Xiaolei Ma , Xuepeng Zhan , Yuan Li , Jiezhi Chen
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中文翻译：
勘误表：“横向电荷迁移在3D电荷捕获NAND闪存中引起异常读取干扰” 物理 快递13 [https://doi.org/10.35848/1882-0786/ab8729]，054002（2020）]
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更新日期：2020-05-28
中文翻译：
勘误表：“横向电荷迁移在3D电荷捕获NAND闪存中引起异常读取干扰” 物理 快递13 [https://doi.org/10.35848/1882-0786/ab8729]，054002（2020）]
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