We report a silicon-contacted Ge/Si avalanche photodiode with RF gain of 11 and a bandwidth of 27 GHz at -12 V operating at 1310 nm. The device is fabricated in an established Si photonics platform without additional process complexity and contacts only on Si. Wafer-scale performance data are presented confirming the reproducibility and the manufacturability of the device. Wide open eye diagrams are demonstrated for 25, 40, and 50 Gbps data-rates. The demonstration of such avalanche photodiode shows great potential for improving optical link margins for optical transceivers operating at 400 Gb/s and beyond.

中文翻译：

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27 GHz 硅接触波导耦合 Ge/Si 雪崩光电二极管

我们报告了一种硅接触 Ge/Si 雪崩光电二极管，其射频增益为 11，带宽为 27 GHz，-12 V，工作在 1310 nm。该器件是在成熟的硅光子学平台上制造的，没有额外的工艺复杂性，并且仅在硅上接触。提供了晶圆级性能数据，确认了设备的再现性和可制造性。展示了 25、40 和 50 Gbps 数据速率的全开眼图。这种雪崩光电二极管的演示显示了改善以 400 Gb/s 及更高速度运行的光收发器的光链路裕量的巨大潜力。