In this article, we present a fast and cost-effective approach of fabricating laterally stacked nanostructures using a trench isolation technique. The essential part of this process is the patterning of sub-micrometer trenches onto the silicon substrate in a single lithographic step. The trenches are further tuned to make the channel length in the range of 100 nm, where the metallic electrodes are formed. An organic semiconductor (copper phthalocyanine, CuPc) is then selectively deposited onto the trenches by thermal evaporation method in order to successfully form a conducting channel. The current-voltage characteristics of such a nanostructure are also measured and analyzed.

中文翻译：

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使用沟槽隔离技术制造的有机半导体通道横向堆叠纳米结构的研究

在本文中，我们提出了一种使用沟槽隔离技术制造横向堆叠纳米结构的快速且具有成本效益的方法。该工艺的主要部分是在单个光刻步骤中将亚微米沟槽图案化到硅衬底上。进一步调整沟槽，使通道长度在 100 nm 的范围内，金属电极在此处形成。然后通过热蒸发方法将有机半导体（铜酞菁，CuPc）选择性地沉积到沟槽上，以成功形成导电通道。还测量和分析了这种纳米结构的电流-电压特性。