Gallium Nitride (GaN) based light-emitting diodes (LEDs) suffer from the persistent issue of high resistivity of the p-type layer, due to inefficient dopant activation at room temperature. Here, a novel Electrostatic Field Effect LED (EFELED) is demonstrated to solve this issue by introducing significantly more holes into the LED active region for the first time. An increase in drive current is observed through application of positive biases to a capacitor layer on top of a 436 nm InGaN/GaN LED. With a positive bias of 5 V applied to the capacitor, the EFELED showed more than a two-fold increase in optical output from electroluminescence (EL) measurements, as well as over 115% enhanced external quantum efficiency (EQE). Modulation of holes can also be achieved through the novel capacitor integration in the EFELED, which leads to light output control. This proposed EFELED provides an alternative method to efficiently improve hole injection for the active region through energy band bending, which addresses the fundamental p-type doping issue for LED devices.

中文翻译：

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静电场效应发光二极管

由于室温下掺杂剂激活效率低下，基于氮化镓 (GaN) 的发光二极管 (LED) 一直存在 p 型层电阻率高的问题。在这里，一种新型静电场效应 LED (EFELED) 首次通过在 LED 有源区引入明显更多的孔来解决这个问题。通过向 436 nm InGaN/GaN LED 顶部的电容器层施加正偏压，可以观察到驱动电流的增加。对电容器施加 5 V 的正偏压后，EFELED 的电致发光 (EL) 测量的光输出增加了两倍以上，外量子效率 (EQE) 提高了 115% 以上。孔的调制也可以通过 EFELED 中的新型电容器集成来实现，这导致光输出控制。这种提出的 EFELED 提供了一种通过能带弯曲有效改善有源区空穴注入的替代方法，解决了 LED 器件的基本 p 型掺杂问题。