This study introduces the synthesis of conformal crystalline SnTe films through atomic layer deposition (ALD) using the sequential injection of Sn(N(CH₃)₂)₄ and Te(Si(CH₃)₃)₂ with NH₃ coinjection. The one to one stoichiometry of the deposited SnTe films indicates the conversion of Sn(IV) to Sn(II) and the removal of Te(0) during the deposition process as a result of the redox reaction between Sn(IV) and Te^2–. NH₃ coinjection with Te(Si(CH₃)₃)₂ facilitated the uniform growth of SnTe films even at high temperatures (>130 °C), where the growth was severely retarded in the absence of NH₃ due to the desorption of the precursors from the substrates. The self-limiting growth rates of 93 and 150 ng·cm^–2·cycle^–1 (1.5 and 2.4 Å·cycle^–1) were obtained at 90 and 130 °C, respectively. The process produced high-purity, crystalline-as-deposited SnTe films with a face-centered cubic structure.

中文翻译：

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Sn（N（CH ₃）₂）₄和Te（Si（CH ₃）₃）₂的氨注入法制备SnTe薄膜的原子层

本研究介绍了通过依次注入Sn（N（CH ₃）₂）₄和Te（Si（CH ₃）₃）₂和NH ₃共注入通过原子层沉积（ALD）合成保形晶体SnTe薄膜的方法。沉积的SnTe膜的一对一化学计量关系表明，由于Sn（IV）和Te ²之间的氧化还原反应，在沉积过程中Sn（IV）转化为Sn（II）和Te（0）的去除^–。NH ₃与Te（Si（CH ₃）₃）₂共注入甚至在高温（> 130°C）下，SnTe薄膜的均匀生长也变得容易，因为前驱物从基板上的解吸，在没有NH ₃的情况下，生长受到严重阻碍。在90和130°C时分别获得93和150 ng·cm ^–2 ·循环^–1（1.5和2.4Å·循环^–1）的自限增长率。该工艺生产了具有面心立方结构的高纯度晶体沉积SnTe薄膜。