Demonstration of N-Polar III-Nitride Tunnel Junction LED,ACS Photonics

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Demonstration of N-Polar III-Nitride Tunnel Junction LED
ACS Photonics ( IF 6.5 ) Pub Date : 2020-05-28 , DOI: 10.1021/acsphotonics.0c00269
Yuantao Zhang ₁ , Gaoqiang Deng ₁ , Ye Yu ₁ , Yang Wang ₁ , Degang Zhao ₂ , Zhifeng Shi ₃ , Baolin Zhang ₁ , Xiaohang Li ₄

Affiliation

In this study, we have demonstrated an N-polar III-nitride tunnel junction (TJ) light-emitting diode (LED). The LED was grown on an N-polar GaN template on sapphire substrates by metal-organic vapor phase epitaxy. The growth started with the n-GaN cladding layer, whose doping condition was optimized by the periodic doping method, and then the InGaN/GaN quantum well active region. Subsequently, the TJ was grown comprising a graded p-AlGaN layer, a thin undoped Al_0.4Ga_0.6N interlayer, and the topmost n-GaN layer. The I–V measurement shows that the device resistance of the TJ LED was significantly reduced compared to the reference LED without the TJ due to enhanced hole injection. The electroluminescence measurement manifested that the emission and the external quantum efficiency of the TJ LED were greatly enhanced by ∼70% compared with the reference LED. This work demonstrates that the TJ devices can be realized amid the N-polarity that is promising for high-performance devices operating at various wavelengths.

中文翻译：

N-Polar III-氮化物隧道结LED的演示

在这项研究中，我们证明了N极III氮化物隧道结（TJ）发光二极管（LED）。通过金属有机气相外延，在蓝宝石衬底上的N极性GaN模板上生长LED。生长始于n-GaN包覆层，其掺杂条件通过周期性掺杂方法进行了优化，然后是InGaN / GaN量子阱有源区。随后，生长TJ，包括渐变的p-AlGaN层，未掺杂的薄Al _0.4 Ga _0.6 N中间层和最顶层的n-GaN层。在我- V测量显示，由于空穴注入增强，与没有TJ的参考LED相比，TJ LED的器件电阻大大降低。电致发光测量表明，与参考LED相比，TJ LED的发射和外部量子效率大大提高了约70％。这项工作表明，可以在N极性中实现TJ器件，这对于在各种波长下工作的高性能器件很有希望。

更新日期：2020-07-15

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