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Ultralow Dark Currents in Avalanche Amorphous Selenium Photodetectors Using Solution-Processed Quantum Dot Blocking Layer
ACS Photonics ( IF 6.5 ) Pub Date : 2020-05-28 , DOI: 10.1021/acsphotonics.9b01651
Haripriya Kannan 1 , Jann Stavro 2 , Atreyo Mukherjee 3 , Sébastien Léveillé 4 , Kim Kisslinger 5 , Lizhu Guan 1, 6 , Wei Zhao 7 , Ayaskanta Sahu 1 , Amir H. Goldan 7
Affiliation  

We propose a true solid-state alternative to the vacuum photomultiplier tube using amorphous selenium (a-Se) as the bulk avalanche i-layer. A-Se is a unique photosensing material in which carrier transport can be shifted entirely from localized to extended states where only holes get hot and undergo impact ionization, resulting in deterministic and non-Markovian avalanche gain. To achieve reliable and repeatable impact ionization gain without irreversible breakdown, a non-insulating metal oxide n-type hole-blocking/electron-transporting layer is needed. For the first time, we have deposited a solution-processed quantum dot (QD) hole blocking layer over an a-Se film at room temperature, without any surface or bulk crystallization. We have measured the lowest dark current density ever reported (30 pA/cm2 at the onset of avalanche) compared to any other solid-state avalanche sensor at room temperature. Our results provide new strategies for the development of advanced solid-state photomultipliers via efficient QD-based interface layers to fully exploit the deterministic avalanche properties of a-Se.

中文翻译:

使用溶液处理的量子点阻挡层的雪崩非晶硒光电探测器中的超低暗电流

我们提出了一种使用非晶态硒(a- Se)作为整体雪崩i层的真空光电倍增管的真正固态替代品。A-Se是一种独特的光敏材料,其中的载流子传输可以完全从局部状态转移到扩展状态,在这种状态下,只有空穴变热并发生碰撞电离,从而导致确定性和非马尔可夫雪崩增益。为了在不发生不可逆击穿的情况下获得可靠且可重复的冲击电离增益,需要非绝缘金属氧化物n型空穴阻挡/电子传输层。对于第一次,我们已经沉积在溶液处理的量子点(QD)的孔通过一个阻挡层-Se薄膜在室温下没有任何表面或块状结晶。与室温下的任何其他固态雪崩传感器相比,我们已测量出有史以来最低的暗电流密度(雪崩发作时为30 pA / cm 2)。我们的研究结果提供了通过高效的基于QD-界面层的先进的固态光电倍增管的发展,充分利用的确定性雪崩特性的新战略一个-Se。
更新日期:2020-05-28
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