A Talbot–Lau x-ray deflectometer can map electron density gradients in high energy density plasmas, as well as provide information about plasma elemental composition through single-image x-ray refraction and attenuation measurements. A new adaptation to a pulsed power environment used backlighting from copper X-pinches, allowing for electron density mapping of a low-Z object. Even though the X-pinch backlighter is not properly optimized for emitting x-rays in terms of source size and photon fluence, Moire fringe patterns with contrast up to 14% and fringe shift due to refraction on a beryllium object are obtained. Due to the proximity of the deflectometer with the X-pinch (∼6 cm), it is shown that a protective filter is required to avoid damage in the closest (i.e., source) grating due to both plasma debris and mechanical shock. Regarding grating survival, these did not show any damage due to the intense magnetic field or heating induced by plasma radiation. Electron density on beryllium was measured with a difference lower than 16%. The areal electron density mapping of the sample was limited by source size characteristics, in similarity to transmission radiography. These results show the potential of plasma electron density as well as material mapping through Talbot–Lau x-ray deflectometry in a pulsed power environment.

中文翻译：

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Talbot-Lau X 射线偏转测量法在脉冲功率环境中使用铜 X 收缩背光源实现

Talbot-Lau X 射线偏转仪可以绘制高能量密度等离子体中的电子密度梯度，并通过单图像 X 射线折射和衰减测量提供有关等离子体元素组成的信息。对脉冲功率环境的新适应使用铜 X 夹点的背光，允许对低 Z 物体进行电子密度映射。即使 X-pinch 背光源在源尺寸和光子注量方面没有针对发射 X 射线进行适当优化，但仍会获得对比度高达 14% 的莫尔条纹图案和由于铍物体上的折射而导致的条纹偏移。由于偏转计与 X 收缩（~6 cm）的接近，表明需要一个保护性过滤器来避免最近（即源）光栅由于等离子体碎片和机械冲击而损坏。关于光栅的存活，这些没有显示出由于强磁场或等离子体辐射引起的加热而造成的任何损坏。测量铍上的电子密度，差异小于 16%。样品的面积电子密度映射受源尺寸特征的限制，类似于透射射线照相术。这些结果显示了等离子体电子密度的潜力以及在脉冲功率环境中通过 Talbot-Lau X 射线偏转计进行的材料映射。