The discovery of single-phase multiferroic materials and the understanding of intriguing physics of the coupling mechanisms between their spin and polarization are important for the next generation of multifunctional devices. In this work, we report dielectric, ferroelectric, and magnetization results of Pd-substituted room-temperature magnetoelectric multiferroic Pb(Zr0.20Ti0.80)0.7Pd0.3O3 (PZTPd) thin films. Highly c axis oriented PZTPd thin films were grown on {(LaAlO3)0.3(Sr2AlTaO6)0.7} substrates using the pulsed laser deposition technique. These films were phase pure and stabilized in a tetragonal phase. Atomic force microscopic studies indicated a homogeneous distribution of grains on the films' surface with a surface roughness (RQ) of ∼5.4 nm. A large dielectric constant of ∼1780 and a low loss tangent value of ∼0.52 were observed at 1 kHz measured at room temperature. Temperature dependent dielectric studies on Pt/PZTPd/La0.7Sr0.3MnO3 metal–insulator–metal heterostructure capacitors between 80 and 660 K indicated a diffused ferroelectric to paraelectric phase transition around 515 K. The polarization hysteresis loops observed at room temperature were attributed to its ferroelectric behavior. Saturated magnetization hysteresis loop with remanent magnetization of 1.54 emu/cm3 was obtained at room temperature. Ferromagnetic ordering in thin films was found to sustain in the entire temperature range from 5 to 395 K, as revealed from the constant behavior of the dM/dT curve with temperature. The mixed oxidation states of palladium (Pd2+/Pd4+) dispersed in the polar Pb(Zr0.20Ti0.80)O3 matrix were revealed from our high resolution x-ray photoelectron spectroscopic studies and is ascribed to the origin of ferromagnetic ordering in the film. These findings suggest that PZTPd thin films are multiferroic (ferroelectric–ferromagnetic) at room temperature.

中文翻译：

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锆钛酸铅钯：室温纳米级多铁性薄膜

单相多铁性材料的发现以及对其自旋和极化之间耦合机制的有趣物理学的理解对于下一代多功能设备非常重要。在这项工作中，我们报告了 Pd 取代的室温磁电多铁性 Pb(Zr0.20Ti0.80)0.7Pd0.3O3 (PZTPd) 薄膜的介电、铁电和磁化结果。使用脉冲激光沉积技术在 {(LaAlO3)0.3(Sr2AlTaO6)0.7} 衬底上生长高度 c 轴取向的 PZTPd 薄膜。这些薄膜是相纯的并且稳定在四方相中。原子力显微研究表明，薄膜表面晶粒均匀分布，表面粗糙度 (RQ) 约为 5.4 nm。～1780 的大介电常数和～0 的低损耗角正切值。在室温下测量的 1 kHz 下观察到 52 个。Pt/PZTPd/La0.7Sr0.3MnO3 金属-绝缘体-金属异质结构电容器在 80 到 660 K 之间的温度依赖性介电研究表明，在 515 K 附近存在铁电到顺电的扩散相变。在室温下观察到的极化滞后回线归因于其铁电行为。在室温下获得剩余磁化强度为 1.54 emu/cm3 的饱和磁化磁滞回线。发现薄膜中的铁磁有序在 5 到 395 K 的整个温度范围内保持不变，正如 dM/dT 曲线随温度的恒定行为所揭示的那样。钯的混合氧化态 (Pd2+/Pd4+) 分散在极性 Pb(Zr0.20Ti0.2) 中。80)O3 基质是从我们的高分辨率 X 射线光电子光谱研究中发现的，这归因于薄膜中铁磁有序的起源。这些发现表明 PZTPd 薄膜在室温下是多铁性的（铁电-铁磁）。