Thermal conductivity κ ( T ) of single crystal aluminum nitride grown by physical vapor transport has been measured at temperatures T from 5 to 410 K. The samples exhibit high thermal conductivity with a value of up to 316 W m − 1 K − 1 at room temperature and about 2800 W m − 1 K − 1 at a peak of 66 K. At lowest temperatures, κ ( T ) approaches the conductivity limited by the diffuse phonon scattering from sample surfaces. The peculiarities in measured κ ( T ) suggest that the phonon scattering from point defects contributes essentially to the total phonon scattering in samples under investigation at low temperatures. The phonon interaction with electrons and holes bound to neutral donor and acceptor centers is suggested, adding substantially to thermal resistivity near and below the peak in κ ( T ).

中文翻译：

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单晶AlN的热导率

已在 5 至 410 K 的温度 T 下测量了通过物理蒸汽传输生长的单晶氮化铝的热导率 κ ( T )。样品在室温下表现出高达 316 W m - 1 K - 1 的高热导率温度和大约 2800 W m - 1 K - 1 在 66 K 的峰值。在最低温度下，κ ( T ) 接近由样品表面的漫射声子散射限制的电导率。测量的 κ ( T ) 的特性表明，点缺陷的声子散射对低温下研究的样品中的总声子散射有重要贡献。建议与电子和空穴相互作用的声子与中性施主和受主中心结合，大大增加了 κ ( T ) 峰值附近和以下的热阻。