The temperature dependence of the charge carrier density, mobility, and Seebeck coefficient of melt-grown, bulk ZnGa₂O₄ single crystals was measured between 10 K and 310 K. The electrical conductivity at room temperature is about σ = 286 S/cm due to a high electron concentration of n = 3.26 × 10¹⁹ cm⁻³ caused by unintentional doping. The mobility at room temperature is μ = 55 cm²/V s, whereas the scattering on ionized impurities limits the mobility to μ = 62 cm²/Vs for temperatures lower than 180 K. The Seebeck coefficient relative to aluminum at room temperature is $S_{{\text{ZnGa}}_2{\text{O}}_4-\text{Al}}=\left(-125\pm 2\right)\mu$V/K and shows a temperature dependence as expected for degenerate semiconductors. At low temperatures, around 60 K, we observed the maximum Seebeck coefficient due to the phonon drag effect.

中文翻译：

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熔融生长的块状ZnGa2O4单晶的电荷载流子密度，迁移率和塞贝克系数

熔体生长的块状ZnGa ₂ O ₄单晶的电荷载流子密度，迁移率和塞贝克系数与温度的关系在10 K和310 K之间测量。室温下的电导率约为σ = 286 S / cm由于无意掺杂导致的高电子浓度n = 3.26×10 ¹⁹ cm ^-3。室温下的迁移率是μ = 55 cm ² / V s，而在离子杂质上的散射将迁移率限制在μ = 62 cm ² / Vs（对于低于180 K的温度）。在室温下，相对于铝的塞贝克系数为${\mathrm{小号}}_{{\text{锌镓}}_2{\text{Ø}}_4-\text{铝}}=（-125\pm 2）\mu$V / K并显示了退化半导体所期望的温度依赖性。在约60 K的低温下，由于声子拖曳效应，我们观察到了最大塞贝克系数。