The non-centrosymmetric crystal structures of polar-semiconductors comprising GaN, InN, AlN, and ZnO intrigued the scientific community in investigating their potential for a strain-induced nano-energy generation. The coupled semiconducting and piezoelectric properties produce a piezo-potential that modulates the charge transport across their heterostructure interfaces. By using conductive-atomic force microscopy, we investigate the mechanism that gives rise to the piezotronic effect in AlGaN nanowires (NWs) grown on a molybdenum (Mo) substrate. By applying external bias and force on the NWs/Mo structure using a Pt–Ir probe, the charge transport across the two adjoining Schottky junctions is modulated due to the change in the apparent Schottky barrier heights (SBHs) that result from the strain-induced piezo-potential. We measured an increase in the SBH of 98.12 meV with respect to the background force, which corresponds to an SBH variation $\frac{\partial \varphi }{\partial F}$ of 6.24 meV/nN for the semiconductor/Ti/Mo interface. The SBH modulation, which is responsible for the piezotronic effect, is further studied by measuring the temperature-dependent I–V curves from room temperature to 398 K. The insights gained from the unique structure of AlGaN NWs/Mo shed light on the electronic properties of the metal-semiconductor interfaces, as well as on the potential application of AlGaN NW piezoelectric nanomaterials in optoelectronics, sensors, and energy generation applications.

中文翻译：

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在金属衬底上生长压电AlGaN纳米线肖特基结

包含GaN，InN，AlN和ZnO的极性半导体的非中心对称晶体结构引起了科研界的兴趣，他们研究了它们产生应变诱导的纳米能量的潜力。耦合的半导体和压电特性产生压电势，该压电势可调节跨其异质结构界面的电荷传输。通过使用导电原子力显微镜，我们研究了在钼（Mo）衬底上生长的AlGaN纳米线（NWs）中产生压电效应的机理。通过使用Pt-Ir探针在NWs / Mo结构上施加外部偏压和力，由于应变引起的表观肖特基势垒高度（SBHs）的变化，跨两个相邻肖特基结的电荷传输受到调制压电势。$\frac{\partial \varphi }{\partial F}$半导体/ Ti / Mo界面的电阻为6.24 meV / nN。通过测量从室温到398 K的温度相关的I–V曲线，进一步研究了负责压电效应的SBH调制。AlGaN NWs / Mo的独特结构为电子性能提供了见解。金属半导体界面的应用，以及AlGaN NW压电纳米材料在光电，传感器和能量产生应用中的潜在应用。