The broadening functions for quantum wells in LEDs and laser diodes below the lasing threshold are examined. Inhomogeneous and homogeneous broadening mechanisms are included. Hydrogen-atom-like exciton and the electron-hole plasma recombination models are considered. Material disorder and the Urbach tail are reviewed as the main reasons for the inhomogeneous broadening. Charge carrier scattering and relaxation times in the conduction and valence bands are examined as the origin for the homogeneous lifetime broadening. Two homogeneous lineshapes are compared using the momentum relaxation times obtained from the electron and hole mobilities available for GaAs. In addition to crystal disorder, the mutual collision of charge carriers in the quantum wells is examined as the reason for the relaxation time shortening. The analogy to pressure broadening in gases is used to combine the proper homogeneous and inhomogeneous broadening functions to a unified quantum well lineshape.

中文翻译：

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发光二极管中量子阱的统一泛滥线扩展功能

研究了低于激光阈值的LED和激光二极管中量子阱的加宽功能。包括不均匀和均匀的加宽机制。考虑氢原子样激子和电子-空穴等离子体复合模型。物质紊乱和Urbach尾巴被认为是不均匀扩展的主要原因。导带和价带中载流子的散射和弛豫时间被视为均匀寿命延长的起源。使用从可用于GaAs的电子和空穴迁移率获得的动量弛豫时间，比较了两种均匀的线形。除晶体无序外，还研究了量子阱中电荷载流子的相互碰撞，作为缩短弛豫时间的原因。