Disorder‐Induced Transport Peculiarities in Amorphous Molybdenum Silicide Thin Films,Physica Status Solidi (B) - Basic Solid State Physics

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Disorder‐Induced Transport Peculiarities in Amorphous Molybdenum Silicide Thin Films
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2020-05-29 , DOI: 10.1002/pssb.202000165
Zhengyuan Liu ₁ , Bingcheng Luo ₁

Affiliation

Disorder‐induced localization as a kernel of metal–insulator transition (MIT) in amorphous materials has been widely studied over the past few decades. Herein, the effect of disorder on the electronic transport behavior in the prototypical amorphous molybdenum silicide thin films is reported. The metallic conduction with negative temperature coefficient of resistivity (TCR) is demonstrated in amorphous molybdenum silicide thin films. Also, the surface disorder can induce the discrepancy in sheet resistance of amorphous molybdenum silicide thin films. This work clarifies the effect of disorder on the electronic transport and provides an alternative strategy to tune the electronic transport behavior of amorphous materials through engineering the surface disorder.

中文翻译：

非晶硅化钼薄膜中无序诱导的传输特性

在过去的几十年中，作为非晶态材料中金属-绝缘体转变（MIT）内核的无序诱导局部化已得到广泛研究。在此，报道了无定形对原型非晶硅化钼硅薄膜中电子传输行为的影响。在非晶硅化钼薄膜中证明了具有负电阻率温度系数（TCR）的金属导电。而且，表面紊乱可引起非晶硅化钼硅化物薄膜的薄层电阻差异。这项工作阐明了无序对电子输运的影响，并提供了通过设计表面无序来调整非晶态材料的电子输运行为的替代策略。

更新日期：2020-05-29

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