Abstract Three aryl vinyl terminated 9-fluorenone compounds (pMe-DEPFO, DEPFO and F5-DEPFO) were designed and synthesized. The single crystal structure of pMe-DEPFO shows that the molecule has a good planarity and packs orderly, which is crucial for the charge transport. The optical and electrochemical properties indicate that aryl end groups with different electron push-pull effect can adjust the molecular HOMO and LUMO energy levels (EHOMO: -5.14∼-5.53 eV; ELUMO: -2.91∼-3.13 eV), which lead to different energy gaps (Egopt: 2.23∼2.40 eV). The “Al/fluorenone/ITO” devices of pMe-DEPFO and DEPFO both exhibit excellent non-volatile flash memory property with high ON/OFF ratios (∼104 and 106). In contrast, F5-DEPFO-based device displays WORM memory behavior with high ON/OFF ratio (∼105). The experimental and theoretical calculation results confirm that the adjustment of molecular end groups leads to the different of film-forming ability, which tuned the resistive memory behavior.

中文翻译：

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用于电阻存储器件的芴酮分子：通过调整端基来调节存储行为

摘要 设计并合成了三种芳基乙烯基封端的9-芴酮化合物（pMe-DEPFO、DEPFO和F5-DEPFO）。pMe-DEPFO 的单晶结构表明该分子具有良好的平面性和有序堆积，这对电荷传输至关重要。光学和电化学性质表明，具有不同电子推挽效应的芳基端基可以调节分子 HOMO 和 LUMO 能级（EHOMO：-5.14∼-5.53 eV；ELUMO：-2.91∼-3.13 eV），从而导致不同的能隙（Egopt：2.23∼2.40 eV）。pMe-DEPFO 和 DEPFO 的“Al/芴酮/ITO”器件均表现出优异的非易失性闪存特性，具有高开/关比（~104 和 106）。相比之下，基于 F5-DEPFO 的设备显示具有高 ON/OFF 比（~105）的 WORM 内存行为。