Abstract A Heterojunction of Au/Coronene/p-Si/Al was fabricated by thermal evaporation technique. The features of current-voltage (I–V) were examined under dark condition at several temperatures in 292–373 K range. Extensive analysis of I–V curves in forward bias demonstrated that the mechanisms of thermionic emission and space charge limited currents represent the dominant mechanisms in the low and high range of used voltages, respectively. The reverse I–V curves were interpreted via Poole– Frenkel and Schottky effects. Some specific parameters were estimated as diode ideality factor, series resistance and shunt resistance. The photovoltaic manner of Coronene/p-Si heterojunction was shown under illumination. The cell parameters were evaluated from the analysis; open circuit voltage, short circuit current and fill factor.

中文翻译：

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基于 Coronene/p-Si 的异质结的温度相关 I-V 表征：空间电荷限制电流、高压下的肖特基发射、低电压下的热离子发射和池-弗伦克尔发射

摘要 采用热蒸发技术制备了Au/Coronene/p-Si/Al异质结。在 292-373 K 范围内的几个温度下，在黑暗条件下检查电流 - 电压 (I-V) 的特征。对正向偏置中的 I-V 曲线的广泛分析表明，热电子发射机制和空间电荷限制电流分别代表了低电压和高电压范围的主要机制。反向 I-V 曲线通过 Poole-Frenkel 和 Schottky 效应解释。一些具体参数被估计为二极管理想因子、串联电阻和分流电阻。Coronene/p-Si异质结的光伏方式在光照下显示。从分析中评估电池参数；开路电压、短路电流和填充因子。