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Mechanical integrity of back-end-of-line with Ru nanowires and airgaps
Microelectronics Reliability ( IF 1.6 ) Pub Date : 2020-07-01 , DOI: 10.1016/j.microrel.2020.113700
Houman Zahedmanesh , Kris Vanstreels

Abstract In this study, the mechanical integrity of novel back-end-of-line (BEOL) with ruthenium nanowires and airgaps was investigated using a combination of nano-indentation, delamination tests and finite element modelling. The ruthenium interconnects with and without airgaps were benchmarked against standard dual damascene copper BEOLs. The impact of interconnect aspect ratio, adhesion promotion at the metal-dielectric interfaces, airgap implementation and low-k dielectric selection was investigated. The study demonstrates that ruthenium-airgap interconnects of high aspect ratio 3 with standard adhesion promoting layers at the metal-dielectric interfaces and interlevel dielectric's Young's moduli as low as 12 GPa, can provide a mechanical integrity on a par with dual damascene Cu BEOL.

中文翻译:

具有 Ru 纳米线和气隙的生产线后端的机械完整性

摘要 在这项研究中,结合纳米压痕、分层测试和有限元建模,研究了具有钌纳米线和气隙的新型生产线后端 (BEOL) 的机械完整性。带和不带气隙的钌互连件以标准双镶嵌铜 BEOL 为基准。研究了互连纵横比、金属-电介质界面处的粘附促进、气隙实施和低 k 电介质选择的影响。该研究表明,具有高纵横比 3 的钌气隙互连在金属 - 电介质界面处具有标准粘合促进层,层间电介质的杨氏模量低至 12 GPa,可以提供与双镶嵌铜 BEOL 相当的机械完整性。
更新日期:2020-07-01
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