Influence of oxygen on silicon nanocrystals formation peculiarities and size in semi-insulating polycrystalline silicon thin films has been demonstrated by the means of local atomic surrounding sensitive electronic structure experimental studies. Low-pressure chemical deposition from the gas phase at a relatively low temperature leads to formation of semi-insulating polycrystalline silicon film containing nanocrystals with the grain size of 20–40 nm. At the same time, films oxygen doping result in formation of silicon nanocrystals arrays with the mean particle size less than 10 nm. Possibility of size-controlled Si nanocrystals formation followed by electronic structure reconstruction of amorphous films with nanocrystalline inclusions is discussed and can be found prospective for a range of possible applications.

通过局部原子围绕敏感电子结构的实验研究证明了氧对半绝缘多晶硅薄膜中硅纳米晶体形成特性和尺寸的影响。在相对较低的温度下从气相进行低压化学沉积会导致形成半绝缘的多晶硅膜，该膜包含粒径为20-40 nm的纳米晶体。同时，薄膜氧掺杂导致形成平均粒径小于10nm的硅纳米晶体阵列。讨论了形成尺寸受控的Si纳米晶体，然后进行具有纳米晶体夹杂物的非晶膜电子结构重建的可能性，并且可以发现其在一系列可能的应用中具有前景。