Gallium Nitride shows huge potential in power electronics applications thanks to the superior intrinsic material properties which result in improved performance both at device level and system level. Great effort has been taken in recent years to industrialize GaN technology and to solve some of the major drawbacks like reliability issues and dynamic effects. The goal of this work is to propose a novel methodology to analyse the role of these phenomena on the end application efficiency. These insights can thus lead to a system-level driven optimization of GaN technology. We propose a method based on T-CAD mixed-mode simulation and we give an example of its implementation in the analysis of a class-E power amplifier for wireless power transfer. Efficiency curve is extracted for different load resistance values. This is carried out for the device both in relaxed and in stressed conditions to evaluate the impact of buffer traps. It is demonstrated how the main degradation resides in the increased dynamic resistance while threshold voltage shift and output capacitance variations both play a minor role. A method to calculate the dynamic resistance evolution during the switching cycles is then outlined. At the design point the resistance is expected to fully recover to the nominal value.

氮化镓由于其优异的固有材料特性而在电力电子应用中显示出巨大的潜力，从而提高了器件级和系统级的性能。近年来，为将GaN技术产业化并解决一些主要缺点（如可靠性问题和动态效果）付出了巨大的努力。这项工作的目的是提出一种新颖的方法来分析这些现象对最终应用程序效率的作用。这些见解因此可以导致GaN技术的系统级驱动优化。我们提出了一种基于T-CAD混合模式仿真的方法，并给出了在无线功率传输的E类功率放大器分析中实现该方法的示例。针对不同的负载电阻值提取效率曲线。在松弛和压力条件下对设备执行此操作，以评估缓冲区陷阱的影响。事实证明，主要的退化是如何驻留在增加的动态电阻中，而阈值电压漂移和输出电容变化均起着较小的作用。然后概述了一种计算开关周期内动态电阻变化的方法。在设计点，预计电阻将完全恢复到标称值。