High-mobility low-hysteresis electrolyte-gated thin-film transistors were successfully fabricated using a diketopyrrolopyrrole (DPP) and benzotriazole (BTz) copolymer semiconductor and high-capacitance ion gels based on 1-ethyl-3-methylimidazolium bis[(trifluoromethyl)sulfonyl]imide ([EMI][TFSI]) and tetraoctyl phosphonium ([P₈₈₈₈]) [TFSI]. The DPP-BTz transistors gated with both ion gels operated effectively at low voltages below 1V with high on-to-off current ratios exceeding 10⁵ and very low device hysteresis. Specifically, when the [EMI][TFSI] ion gel was employed as a gate dielectric layer, the DPP-BTz transistors exhibited a very high carrier-mobility value of 8.50 ± 1.09 cm²/Vs. In addition, device hysteresis of the DPP-BTz transistor was almost invariant to the voltage sweeping rate and was much lower than that of the poly(3-hexylthiophene) (P3HT) transistor under the same conditions. Overall, these results indicate that the performance of electrolyte-gated transistors can be improved using the DPP-BTz semiconductor.

中文翻译：

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具有DPP-苯并三唑共聚物半导体的高迁移率低滞后电解质门控晶体管

使用二酮吡咯并吡咯（DPP）和苯并三唑（BTz）共聚物半导体以及基于1-乙基-3-甲基咪唑鎓双[（（三氟甲基）磺酰基）的高电容离子凝胶，成功制备了高迁移率低磁滞电解质门控薄膜晶体管im酰亚胺（[EMI] [TFSI]）和四辛基phospho（[P ₈₈₈₈ ]）[TFSI]。用两种离子凝胶门控的DPP-BTz晶体管在低于1V的低压下有效工作，具有高开/关电流比，超过10 ^5，并且器件滞后非常低。具体而言，当将[EMI] [TFSI]离子凝胶用作栅极介电层时，DPP-BTz晶体管表现出非常高的载流子迁移率值为8.50±1.09 cm ²/ Vs。此外，在相同条件下，DPP-BTz晶体管的器件滞后几乎与电压扫描速率无关，并且远低于聚（3-己基噻吩）（P3HT）晶体管。总体而言，这些结果表明，使用DPP-BTz半导体可以改善电解质门控晶体管的性能。