Sol–gel methods were used to fabricate Al/p-Si/Cu₂NiSnS₄/Al quaternary functional solar detectors. Diffraction, spectroscopy and microscopy were used for the structural characterization of the photodetectors. The bandgap energy was found to be 1.20 eV. The photodiodes exhibited high absorption characteristics in the visible region, with low reflectance. The photosensitivity, photoresponse, linear dynamic range, barrier height and ideality factor of the photodiodes were characterized. I–V and I–t characteristics of the detectors revealed that they are responsive to light. Detectors also show rectifying behaviour. The electrical properties of the detectors were assessed using C–V, G–V, C_adj–V and G_adj–V plots. Electrical properties were found to be a function of AC signal properties. Such properties are attributed to the existence of interface states. The density of interface states (D_it) calculations of the detectors was performed where reduced density of interface state characteristics for increased frequency was seen.

溶胶-凝胶法用于制造Al / p-Si / Cu ₂ NiSnS ₄ / Al四元功能太阳探测器。衍射，光谱学和显微镜用于光电探测器的结构表征。发现带隙能量为1.20eV。光电二极管在可见光区域表现出高吸收特性，反射率低。表征了光电二极管的光敏性，光响应，线性动态范围，势垒高度和理想因子。探测器的I – V和I – t特性表明它们对光有反应。检测器还显示纠正行为。使用以下方法评估探测器的电性能C – V，G – V，C _adj – V和G _adj – V图。发现电特性是AC信号特性的函数。这些属性归因于接口状态的存在。进行检测器的界面态密度（D _it）计算，发现界面态特征密度降低，频率增加。