Hafnium is an elemental superconductor which crystallizes in a hexagonal close packed structure, has a transition temperature $T_{C} \simeq 400 mK$, and has a high normal state resistivity around $90 \mu \Omega. cm$. In Microwave Kinetic Inductance Detectors (MKIDs), these properties are advantageous since they allow for creating detectors sensitive to optical and near infra-red radiation. In this work, we study how sputter conditions and especially the power applied to the target during the deposition, affect the hafnium $T_{C}$, resistivity, stress, texture and preferred crystal orientation. We find that the position of the target with respect to the substrate strongly affects the orientation of the crystallites in the films and the internal quality factor, $Q_{i}$, of MKIDs fabricated from the films. In particular, we demonstrate that a DC magnetron sputter deposition at a normal angle of incidence, low pressure, and low plasma power promotes the growth of compressive (002)-oriented films and that such films can be used to make high quality factor MKIDs with $Q_{i}$ up to 600,000.

中文翻译：

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用于高品质因数微波动感探测器的溅射铪薄膜的表征

铪是一种元素超导体，以六方密堆积结构结晶，转变温度为 $T_{C} \simeq 400 mK$，并且具有大约 $90 \mu \Omega 的高常态电阻率。厘米$。在微波动感电感探测器 (MKID) 中，这些特性是有利的，因为它们允许创建对光学和近红外辐射敏感的探测器。在这项工作中，我们研究了溅射条件，尤其是在沉积过程中施加到目标上的功率，如何影响铪 $T_{C}$、电阻率、应力、纹理和首选晶体取向。我们发现目标相对于基板的位置强烈影响薄膜中微晶的取向和由薄膜制造的 MKID 的内部品质因数 $Q_{i}$。特别是，