The impact of post-metallization annealing of N-polar AlSiO metal oxide semiconductor (MOS) capacitors was investigated. Annealing in air at 320 and 370 oC reduced the density of near-interface traps from 5.6x1012 to 2.8x1012 cm-2 and extended the region of flat-band voltage stability and low-leakage operation from 0-2.6 MV/cm to 0-4 MV/cm in the forward bias accumulation region. Moreover, annealing at 370oC fully suppressed the instabilities in the flat-band voltage within the test voltage range (-10 to -25V) of depletion operation. The robust dielectric results demonstrated in this paper are promising for further enhancements of gate-robustness in N-polar GaN-based MOS-based transistors.

中文翻译：

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通过 MOCVD 提高在 (000-1) N 极性 GaN 上生长的原位 AlSiO 电介质的操作稳定性

研究了 N 极性 AlSiO 金属氧化物半导体 (MOS) 电容器的后金属化退火的影响。在 320 和 370 oC 的空气中退火将近界面陷阱的密度从 5.6x1012 降低到 2.8x1012 cm-2，并将平带电压稳定性和低泄漏操作的区域从 0-2.6 MV/cm 扩展到 0- 4 MV/cm 在正向偏置累积区。此外，370oC退火充分抑制了耗尽操作测试电压范围（-10至-25V）内平带电压的不稳定性。本文中展示的稳健介电结果有望进一步增强 N 极性 GaN 基 MOS 晶体管的栅极稳健性。