ScAlN is a promising material for applications spanning wide-bandwidth filters, high-electron-mobility transistors, and ferroelectric memory. We investigate conditions influencing wurtzite phase purity for heteroepitaxial ScAlN, and present methods to rapidly identify phase purity degradation. Even for N-rich samples, phase purity is sensitive to the III/V ratio near the N-rich to metal-rich transition. Epitaxial Sc x Al 1− x N samples can be grown at 700 °C with x = 0.06–0.22, although the phase purity degrades for x = 0.32. By reducing the substrate temperature to 390 °C, we demonstrate 200 nm Sc 0.32 Al 0.68 N heteroepitaxial films with a record low rocking curve full-width at half-maximum of 1840 arcsec.

中文翻译：

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分子束外延生长高high分数异质外延ScAlN中相纯度的控制

ScAlN是一种有前途的材料，适用于跨越宽带滤波器，高电子迁移率晶体管和铁电存储器的应用。我们调查影响外延ScAlN的纤锌矿相纯度的条件，并提出了快速识别相纯度下降的方法。即使对于富氮样品，相纯度对富氮至富金属过渡附近的III / V比也很敏感。外延Sc x Al 1-x N样品可以在700°C下生长，x = 0.06-0.22，尽管x = 0.32时相纯度会下降。通过将衬底温度降低到390°C，我们展示了200 nm Sc 0.32 Al 0.68 N异质外延膜，在1840 arcsec的一半最大值处具有创纪录的低摇摆曲线全宽。