A broadband millimeter-wave (mmWave) power amplifier (PA) was implemented using a modified 2D distributed power combining technique. The proposed power combining was based on a single-ended dual-fed distributed combining (SEDFDC) design technique using zero-phase shifting (ZPS) transmission lines. To improve the input/output power distribution of each power cell within a wide frequency range, N/2-way power dividers/combiners were inserted into the distributed combining structure. Modified ZPS lines also simplified the combining structure and curbed phase variation according to the frequency. These modifications enabled power combining cells to increase without degrading the power bandwidth. The proposed PA was fabricated with a commercial 0.15 μm GaAs pseudo high electron-mobility transistor (pHEMT) monolithic microwave-integrated circuit (MMIC) process. It exhibited 20.3 to 24.2 dBm output power (P_out), 12.9 to 21.8 dB power gain, and 5.2% to 12.7% power-added efficiency (PAE) between 26 and 56 GHz.

中文翻译：

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使用改进的2D分布式功率组合的宽带毫米波功率放大器

宽带毫米波（mmWave）功率放大器（PA）使用改进的2D分布式功率组合技术实现。提出的功率组合基于使用零相移（ZPS）传输线的单端双馈分布式组合（SEDFDC）设计技术。为了在较宽的频率范围内改善每个电池的输入/输出功率分布，N将/ 2路功率分配器/组合器插入分布式组合结构中。修改后的ZPS线还简化了组合结构，并根据频率抑制了相位变化。这些修改使功率组合单元能够增加而不会降低功率带宽。拟议的功率放大器采用商业化的0.15μmGaAs伪高电子迁移率晶体管（pHEMT）单片微波集成电路（MMIC）工艺制造。在26至56 GHz之间，它的输出功率（P _out）为20.3至24.2 dBm ，功率增益为12.9至21.8 dB，功率附加效率（PAE）为5.2％至12.7％。