We investigate quantum charge transport of nnn and npn junctions based on two-dimensional black phosphorus (BP), phosphorene. We observe an oscillatory behavior for both the transmission probability and tunneling conductance of phosphorene nnn and npn junctions as a function of the chemical potential and width of the middle tunnel barrier. The oscillating amplitudes and periods can be controlled by means of a top gate voltage in the second segment. Because of the anisotropy of the electronic structure of phosphorene, the transmission probability depends strongly on the direction of the incident electron beam. We show that the perfect transmission can be selected by tuning the chemical potential and width of the middle region as well as the incidence angle of the carriers. In particular, for the $nnn$ regime for the lightly doped case of the middle region, the transmission for any width of the middle region nearly becomes perfect. Under the certain conditions an electron is not allowed to tunnel through the junction that could be used as a single electron transistor. The resulting electronic properties show that the planar pn junctions (PNJs) structures based on phosphorene could be used as rectifiers, showing excellent tunability and novel functionalities. Our findings will open a new way to nanoelectronics based on field-effect tunneling transistors as well as the single electron transistors based on phosphorene heterostructures.

我们研究了基于二维黑磷（BP），磷烯的nnn和npn结的量子电荷传输。我们观察到磷光体nnn和npn的传输概率和隧穿电导的振荡行为结的数量取决于化学势和中间隧道势垒宽度的函数。可以通过第二部分中的顶栅电压来控制振荡幅度和周期。由于phosphor的电子结构的各向异性，传输概率在很大程度上取决于入射电子束的方向。我们表明，可以通过调节中间区域的化学势和宽度以及载体的入射角来选择理想的透射率。特别是对于$ñññ$对于中间区域的轻度掺杂的情况，对于中间区域的任何宽度的透射几乎变得完美。在某些条件下，不允许电子隧穿可以用作单个电子晶体管的结。所得的电子性能表明，基于磷烯的平面pn结（PNJs）结构可用作整流器，具有出色的可调性和新颖的功能。我们的发现将为基于场效应隧穿晶体管的纳米电子技术以及基于磷异质结构的单电子晶体管开辟新途径。