Abstract The stability and reliability at high temperature of Ti3SiC2 based ohmic contacts on p-type 4H-SiC (0001) 4°-off substrates were studied. The contact was grown from Ti100-xAlx alloys annealed at high temperature (from 900 °C to 1200 °C). The Specific Contact Resistance (SCR) at room temperature and at high temperature (up to 600 °C) was in the 10−4–10−5 Ω.cm2 range. A Schottky barrier height of 0.71 to 0.85 eV was calculated for the set of samples. After aging period at 600 °C for 1500 h, the SCR was very stable for Al contents x

中文翻译：

---

p 型 4H-SiC 上稳定可靠的欧姆接触在 600 °C 下老化长达 1500 小时

摘要 研究了 p 型 4H-SiC (0001) 4°-off 衬底上 Ti3SiC2 基欧姆接触在高温下的稳定性和可靠性。触点由在高温下（从 900 °C 到 1200 °C）退火的 Ti100-xAlx 合金生长。室温和高温（高达 600 °C）下的比接触电阻 (SCR) 在 10-4-10-5 Ω.cm2 范围内。对这组样品计算了 0.71 到 0.85 eV 的肖特基势垒高度。在 600 °C 下老化 1500 h 后，SCR 对 Al 含量 x 非常稳定