Pseudo resistors with ultra-high resistance implemented using MOSFETS are employed in a wide range of biomedical applications. However, their resistances are highly dependent on temperature. A gate-voltage-controlled pseudo resistor is proposed to compensate the temperature impact through trimming. Simplified models have been proposed for analyzing the pseudo resistor, and a linear trimming scheme is proposed. The proposed tunable pseudo resistor is fabricated and measured in standard 0.35 $\text{μm}$ CMOS technology. Experimental results demonstrated that tuning could adequately compensate the temperature-induced resistance variation by 8.75x and provide relatively low-temperature dependence.

使用MOSFET实现的具有超高电阻的伪电阻器被广泛用于生物医学应用中。但是，它们的电阻高度依赖于温度。提出了一种栅极电压控制伪电阻器，以通过微调来补偿温度影响。提出了用于分析伪电阻器的简化模型，并提出了线性调整方案。拟议的可调伪电阻器按标准0.35进行制造和测量$\text{微米}$CMOS技术。实验结果表明，调谐可以充分补偿8.75倍的温度引起的电阻变化，并提供相对较低的温度依赖性。