Abstract Aluminum-doped zinc oxide (AZO) thin films are deposited on glass substrate by radio frequency (RF) magnetron sputtering method in confocal configuration at room temperature (RT). Several techniques are used to investigate the effects of sputtering power, from 50 to 300 W, on structural, optical and electrical properties. It is found, from Grazing Incidence X-Ray Diffraction (GIXRD) analysis, that the sputtering power has a great influence on the crystalline quality of AZO films. A preferential orientation along the c-axis is obtained at lower sputtering power of 50 W. XPS analysis confirms the existence of only Zn and Al in the oxidized state in accordance with the XRD results. SEM and AFM observations of AZO films reveal dense and homogenous distribution of small grains on the surface. Analysis by UV–Vis–NIR spectroscopy at RT reveals that the average optical transmittance in the visible range (400–800 nm) of the AZO thin films is higher than 75%. Hall-effect measurements put into evidence that the electrical resistivity of the films increases with the increase of the sputtering power. A low resistivity of 1.65 × 10−3 Ω cm is obtained for the lowest sputtering power (50W). Moreover, AZO thin film deposited at 50 W and annealed for 1h at 400 °C under vacuum shows a lower resistivity of 5.75 × 10−4 Ω cm, an average optical transmission above 86% and a high figure of merit (ФTC) value of 3.4 × 10−3 Ω−1sq which suggests that the fabricated AZO thin films are promising for optoelectronic devices in the UV region.

中文翻译：

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射频溅射功率和真空退火对共焦配置陶瓷靶制备偶氮薄膜性能的影响

摘要 掺铝氧化锌 (AZO) 薄膜通过射频 (RF) 磁控溅射方法在室温 (RT) 共聚焦配置下沉积在玻璃基板上。使用多种技术来研究 50 至 300 W 的溅射功率对结构、光学和电学特性的影响。从掠入射X射线衍射（GIXRD）分析发现，溅射功率对AZO薄膜的结晶质量有很大影响。在 50 W 的较低溅射功率下获得沿 c 轴的优先取向。根据 XRD 结果，XPS 分析证实仅存在氧化态的 Zn 和 Al。AZO 薄膜的 SEM 和 AFM 观察揭示了表面上小晶粒的密集和均匀分布。在室温下通过 UV-Vis-NIR 光谱分析表明，AZO 薄膜在可见光范围 (400-800 nm) 内的平均透光率高于 75%。霍尔效应测量表明薄膜的电阻率随着溅射功率的增加而增加。对于最低溅射功率 (50W)，获得 1.65 × 10−3 Ω cm 的低电阻率。此外，在 50 W 下沉积并在 400 °C 下真空退火 1 小时的 AZO 薄膜显示出 5.75 × 10−4 Ω cm 的较低电阻率、86% 以上的平均光透射率和高品质因数 (ФTC) 值3.4 × 10−3 Ω−1sq 这表明制造的 AZO 薄膜有望用于 UV 区域的光电器件。霍尔效应测量表明薄膜的电阻率随着溅射功率的增加而增加。对于最低溅射功率 (50W)，获得 1.65 × 10−3 Ω cm 的低电阻率。此外，在 50 W 下沉积并在 400 °C 下真空退火 1 小时的 AZO 薄膜显示出 5.75 × 10−4 Ω cm 的较低电阻率、86% 以上的平均光透射率和高品质因数 (ФTC) 值3.4 × 10−3 Ω−1sq 这表明制造的 AZO 薄膜有望用于 UV 区域的光电器件。霍尔效应测量表明薄膜的电阻率随着溅射功率的增加而增加。对于最低溅射功率 (50W)，获得 1.65 × 10−3 Ω cm 的低电阻率。此外，在 50 W 下沉积并在 400 °C 下真空退火 1 小时的 AZO 薄膜显示出 5.75 × 10−4 Ω cm 的较低电阻率、86% 以上的平均光透射率和高品质因数 (ФTC) 值3.4 × 10−3 Ω−1sq 这表明制造的 AZO 薄膜有望用于 UV 区域的光电器件。